onsemi PowerTrench Type N-Channel MOSFET, 900 mA, 20 V Enhancement, 3-Pin SOT-23 FDV305N
- RS-artikelnummer:
- 671-0797
- Tillv. art.nr:
- FDV305N
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
27,10 kr
(exkl. moms)
33,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Försörjningsbrist
- Dessutom levereras 2 650 enhet(er) från den 29 december 2025
Vårt nuvarande lager är begränsat och våra leverantörer förväntar sig brist.
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 2,71 kr | 27,10 kr |
| 100 - 240 | 2,341 kr | 23,41 kr |
| 250 - 490 | 2,027 kr | 20,27 kr |
| 500 - 990 | 1,792 kr | 17,92 kr |
| 1000 + | 1,624 kr | 16,24 kr |
*vägledande pris
- RS-artikelnummer:
- 671-0797
- Tillv. art.nr:
- FDV305N
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 220mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.75V | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 220mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 350mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.75V | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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