onsemi PowerTrench Type N-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SOT-23
- RS-artikelnummer:
- 124-1693
- Tillv. art.nr:
- BSS123
- Tillverkare / varumärke:
- onsemi
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Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
2 076,00 kr
(exkl. moms)
2 595,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 15 000 enhet(er) från den 29 december 2025
- Dessutom levereras 21 000 enhet(er) från den 29 april 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 6000 | 0,692 kr | 2 076,00 kr |
| 9000 - 21000 | 0,58 kr | 1 740,00 kr |
| 24000 - 42000 | 0,561 kr | 1 683,00 kr |
| 45000 - 96000 | 0,505 kr | 1 515,00 kr |
| 99000 + | 0,487 kr | 1 461,00 kr |
*vägledande pris
- RS-artikelnummer:
- 124-1693
- Tillv. art.nr:
- BSS123
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Width | 1.3 mm | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Width 1.3 mm | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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