onsemi PowerTrench Type N-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123
- RS-artikelnummer:
- 671-0321
- Tillv. art.nr:
- BSS123
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
24,64 kr
(exkl. moms)
30,80 kr
(inkl. moms)
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- 370 enhet(er) är redo att levereras
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- Dessutom levereras 16 650 enhet(er) från den 02 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 2,464 kr | 24,64 kr |
| 100 - 240 | 2,128 kr | 21,28 kr |
| 250 - 490 | 1,837 kr | 18,37 kr |
| 500 - 990 | 1,613 kr | 16,13 kr |
| 1000 + | 1,467 kr | 14,67 kr |
*vägledande pris
- RS-artikelnummer:
- 671-0321
- Tillv. art.nr:
- BSS123
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Height | 0.93mm | |
| Width | 1.3 mm | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Distrelec Product Id | 304-43-725 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Height 0.93mm | ||
Width 1.3 mm | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
Distrelec Product Id 304-43-725 | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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