Vishay IRF Type N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 542-9412
- Tillv. art.nr:
- IRF820APBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 enhet)*
14,90 kr
(exkl. moms)
18,62 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Dessutom levereras 8 enhet(er) från den 29 december 2025
- Sista 711 enhet(er) levereras från den 05 januari 2026
Enheter | Per enhet |
|---|---|
| 1 - 9 | 14,90 kr |
| 10 - 49 | 13,44 kr |
| 50 - 99 | 12,66 kr |
| 100 - 249 | 11,20 kr |
| 250 + | 10,53 kr |
*vägledande pris
- RS-artikelnummer:
- 542-9412
- Tillv. art.nr:
- IRF820APBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C
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- Vishay IRF Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220
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