STMicroelectronics Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 486-2313
- Tillv. art.nr:
- STP4NK60ZFP
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
107,52 kr
(exkl. moms)
134,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 70 enhet(er) från den 29 december 2025
- Dessutom levereras 115 enhet(er) från den 05 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 21,504 kr | 107,52 kr |
| 10 - 20 | 19,578 kr | 97,89 kr |
| 25 - 95 | 18,502 kr | 92,51 kr |
| 100 - 495 | 14,38 kr | 71,90 kr |
| 500 + | 12,14 kr | 60,70 kr |
*vägledande pris
- RS-artikelnummer:
- 486-2313
- Tillv. art.nr:
- STP4NK60ZFP
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Maximum Power Dissipation Pd | 25W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 9.3mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Maximum Power Dissipation Pd 25W | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 9.3mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
relaterade länkar
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP4NK60ZFP
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP13NK60ZFP
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP26N60DM6