STMicroelectronics Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220 STP10NK60ZFP
- RS-artikelnummer:
- 485-7428
- Tillv. art.nr:
- STP10NK60ZFP
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
202,94 kr
(exkl. moms)
253,675 kr
(inkl. moms)
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- Dessutom levereras 95 enhet(er) från den 29 december 2025
- Dessutom levereras 25 enhet(er) från den 29 december 2025
- Dessutom levereras 700 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 40,588 kr | 202,94 kr |
| 10 - 95 | 34,452 kr | 172,26 kr |
| 100 - 495 | 26,836 kr | 134,18 kr |
| 500 - 995 | 22,804 kr | 114,02 kr |
| 1000 + | 18,996 kr | 94,98 kr |
*vägledande pris
- RS-artikelnummer:
- 485-7428
- Tillv. art.nr:
- STP10NK60ZFP
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 9.3mm | |
| Width | 4.6 mm | |
| Distrelec Product Id | 304-42-967 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 9.3mm | ||
Width 4.6 mm | ||
Distrelec Product Id 304-42-967 | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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