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STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220

RS-artikelnummer:: 192-4661
Tillv. art.nr:: STP26N60DM6
Tillverkare / varumärke:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220

Mängdrabatt möjlig

Antal (1 rör med 50 enheter)*

1 512,00 kr

(exkl. moms)

1 890,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 50 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per Rør*
50 - 50	30,24 kr	1 512,00 kr
100 - 200	29,422 kr	1 471,10 kr
250 - 450	28,638 kr	1 431,90 kr
500 - 950	27,913 kr	1 395,65 kr
1000 +	27,216 kr	1 360,80 kr

*vägledande pris

RS-artikelnummer:: 192-4661
Tillv. art.nr:: STP26N60DM6
Tillverkare / varumärke:: STMicroelectronics

Specifikationer

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Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	195mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	110W
	Typical Gate Charge Qg @ Vgs	24nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Length	10.4mm
	Height	15.75mm
	Width	4.6 mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 195mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 110W
	Typical Gate Charge Qg @ Vgs 24nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Length 10.4mm
	Height 15.75mm
	Width 4.6 mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220

GRATIS leverans för online beställningar över 500,00 kr

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