onsemi Isolated 2 Type N-Channel Power MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- RS-artikelnummer:
- 354-4941
- Tillv. art.nr:
- FDC6303N
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 enhet)*
6,61 kr
(exkl. moms)
8,26 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Dessutom levereras 23 enhet(er) från den 29 december 2025
- Sista 2 837 enhet(er) levereras från den 05 januari 2026
Enheter | Per enhet |
|---|---|
| 1 - 9 | 6,61 kr |
| 10 - 99 | 5,60 kr |
| 100 - 499 | 4,93 kr |
| 500 - 999 | 4,26 kr |
| 1000 + | 3,92 kr |
*vägledande pris
- RS-artikelnummer:
- 354-4941
- Tillv. art.nr:
- FDC6303N
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 900mW | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 3mm | |
| Width | 1.7 mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 900mW | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 3mm | ||
Width 1.7 mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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