Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3

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85 965,00 kr

(exkl. moms)

107 457,00 kr

(inkl. moms)

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RS-artikelnummer:
279-9915
Tillv. art.nr:
SIHH155N60EF-T1GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Series

SIHH

Package Type

PowerPAK 8 x 8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.159Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

156W

Typical Gate Charge Qg @ Vgs

38nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

8mm

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET with Fast body diode and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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