Vishay EF Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60EF-T1GE3

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Antal (1 rulle med 3000 enheter)*

140 034,00 kr

(exkl. moms)

175 044,00 kr

(inkl. moms)

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3000 +46,678 kr140 034,00 kr

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RS-artikelnummer:
653-077
Tillv. art.nr:
SIHR100N60EF-T1GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.108Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

35nC

Maximum Power Dissipation Pd

347W

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

8 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay 4th generation E Series Power MOSFET equipped with a fast body diode for enhanced switching efficiency. It offers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Packaged in PowerPAK 8x8LR, it's Ideal for server, telecom, lighting, industrial, and solar power applications.

Pb Free

Halogen free

RoHS compliant

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