STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247 STW75N65DM6-4
- RS-artikelnummer:
- 240-0612
- Tillv. art.nr:
- STW75N65DM6-4
- Tillverkare / varumärke:
- STMicroelectronics
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137,65 kr
(exkl. moms)
172,06 kr
(inkl. moms)
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- Dessutom levereras 30 enhet(er) från den 25 mars 2026
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|---|---|
| 1 - 4 | 137,65 kr |
| 5 - 9 | 137,54 kr |
| 10 - 14 | 137,31 kr |
| 15 - 19 | 137,09 kr |
| 20 + | 136,98 kr |
*vägledande pris
- RS-artikelnummer:
- 240-0612
- Tillv. art.nr:
- STW75N65DM6-4
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | STW | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 480W | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.8 mm | |
| Length | 40.92mm | |
| Height | 5.1mm | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series STW | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 480W | ||
Maximum Operating Temperature 150°C | ||
Width 15.8 mm | ||
Length 40.92mm | ||
Height 5.1mm | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
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