STMicroelectronics STW Type N-Channel MOSFET, 92 A Enhancement, 4-Pin TO-247-4 STW65N023M9-4
- RS-artikelnummer:
- 275-1381
- Tillv. art.nr:
- STW65N023M9-4
- Tillverkare / varumärke:
- STMicroelectronics
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4 991,73 kr
(exkl. moms)
6 239,67 kr
(inkl. moms)
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- Dessutom levereras 270 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 90 | 166,391 kr | 4 991,73 kr |
| 120 + | 162,236 kr | 4 867,08 kr |
*vägledande pris
- RS-artikelnummer:
- 275-1381
- Tillv. art.nr:
- STW65N023M9-4
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 92A | |
| Series | STW | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 463W | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5mm | |
| Width | 15.8 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 92A | ||
Series STW | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 463W | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 5mm | ||
Width 15.8 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Excellent switching performance
Easy to drive
100 percent avalanche tested
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