STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247

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3 368,73 kr

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4 210,92 kr

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RS-artikelnummer:
240-0611
Tillv. art.nr:
STW75N65DM6-4
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

30V

Series

STW

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

118nC

Maximum Power Dissipation Pd

480W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

40.92mm

Height

5.1mm

Standards/Approvals

UL

Width

15.8 mm

Automotive Standard

AEC-Q101

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

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