Infineon SPD04P10PL G Type P-Channel MOSFET, -4.2 A, 100 V Enhancement, 3-Pin PG-TO252-3
- RS-artikelnummer:
- 273-7551
- Tillv. art.nr:
- SPD04P10PLGBTMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
74,70 kr
(exkl. moms)
93,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 2 490 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 7,47 kr | 74,70 kr |
| 50 - 90 | 7,325 kr | 73,25 kr |
| 100 - 240 | 6,854 kr | 68,54 kr |
| 250 - 990 | 6,317 kr | 63,17 kr |
| 1000 + | 6,205 kr | 62,05 kr |
*vägledande pris
- RS-artikelnummer:
- 273-7551
- Tillv. art.nr:
- SPD04P10PLGBTMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -4.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SPD04P10PL G | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.94V | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Standards/Approvals | AEC Q101, RoHS | |
| Length | 40mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -4.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SPD04P10PL G | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.94V | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Width 40 mm | ||
Standards/Approvals AEC Q101, RoHS | ||
Length 40mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a qualified according to AEC Q101.
Logic level
RoHS compliant
Enhancement mode
Pb free lead plating
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