Infineon SPD04P10PL G Type P-Channel MOSFET, -4.2 A, 100 V Enhancement, 3-Pin PG-TO252-3 SPD04P10PLGBTMA1

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8 200,00 kr

(exkl. moms)

10 250,00 kr

(inkl. moms)

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2500 +3,28 kr8 200,00 kr

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RS-artikelnummer:
273-7550
Tillv. art.nr:
SPD04P10PLGBTMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-4.2A

Maximum Drain Source Voltage Vds

100V

Series

SPD04P10PL G

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

850mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.94V

Maximum Power Dissipation Pd

38W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

12nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

AEC Q101, RoHS

Width

40 mm

Length

40mm

Height

1.5mm

Automotive Standard

AEC-Q101

The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a qualified according to AEC Q101.

Logic level

RoHS compliant

Enhancement mode

Pb free lead plating

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