Infineon OptiMOS Type N-Channel MOSFET, 142 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL BSZ0901NSIATMA1
- RS-artikelnummer:
- 273-5245
- Tillv. art.nr:
- BSZ0901NSIATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 5000 enheter)*
50 120,00 kr
(exkl. moms)
62 650,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 02 mars 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 5000 + | 10,024 kr | 50 120,00 kr |
*vägledande pris
- RS-artikelnummer:
- 273-5245
- Tillv. art.nr:
- BSZ0901NSIATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TSDSON-8FL | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TSDSON-8FL | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an integrated monolithic schottky like diode. It is qualified according to JEDEC for target applications and it is 100 percent avalanche tested. Optimized SyncFET for high performance buck converter.
Halogen free
RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
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