Infineon ISZ Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- RS-artikelnummer:
- 273-5359
- Tillv. art.nr:
- ISZ019N03L5SATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
67,60 kr
(exkl. moms)
84,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 90 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 13,52 kr | 67,60 kr |
| 50 - 495 | 11,268 kr | 56,34 kr |
| 500 - 995 | 9,676 kr | 48,38 kr |
| 1000 - 2495 | 9,476 kr | 47,38 kr |
| 2500 + | 9,296 kr | 46,48 kr |
*vägledande pris
- RS-artikelnummer:
- 273-5359
- Tillv. art.nr:
- ISZ019N03L5SATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC Standard, RoHS | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series ISZ | ||
Package Type PG-TSDSON-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, JEDEC Standard, RoHS | ||
The Infineon Power MOSFET is an optimized for high performance buck converter. This power MOSFET has an excellent gate charge. It has very low on resistance and qualified according to JEDEC standard.
Halogen free
RoHS compliant
Pb free lead plating
Superior thermal resistance
relaterade länkar
- Infineon ISZ Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ019N03L5SATMA1
- Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ040N03L5ISATMA1
- Infineon ISZ Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ143N13NM6ATMA1
- Infineon ISZ Type N-Channel Power Transistor 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1
- Infineon ISZ Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1
- Infineon ISZ Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TSDSON-8 ISZ113N10NM5LF2ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL
