Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET, 40 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- RS-artikelnummer:
- 273-3044
- Tillv. art.nr:
- ISZ040N03L5ISATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
125,75 kr
(exkl. moms)
157,25 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 5 000 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 5,03 kr | 125,75 kr |
| 50 - 475 | 4,641 kr | 116,03 kr |
| 500 - 975 | 4,314 kr | 107,85 kr |
| 1000 - 2475 | 4,238 kr | 105,95 kr |
| 2500 + | 4,144 kr | 103,60 kr |
*vägledande pris
- RS-artikelnummer:
- 273-3044
- Tillv. art.nr:
- ISZ040N03L5ISATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | OptiMOSTM Power-MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TSDSON-8FL | |
| Series | ISZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 37W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC, IEC61249‑2‑21 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type OptiMOSTM Power-MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TSDSON-8FL | ||
Series ISZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 37W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC, IEC61249‑2‑21 | ||
Automotive Standard No | ||
The Infineon low voltage power MOSFETs offering broad accessibility and competitive price/performance ratio.
Enables cost effective solutions
Fast shipment
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