Infineon HEXFET Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8
- RS-artikelnummer:
- 273-2806
- Tillv. art.nr:
- IRF7351TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
59,06 kr
(exkl. moms)
73,825 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 25 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 11,812 kr | 59,06 kr |
| 50 - 95 | 10,752 kr | 53,76 kr |
| 100 - 495 | 9,878 kr | 49,39 kr |
| 500 - 1995 | 8,468 kr | 42,34 kr |
| 2000 + | 8,266 kr | 41,33 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2806
- Tillv. art.nr:
- IRF7351TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- PH
The Infineon MOSFET is a 60V N Channel HEXFET Power MOSFET. This MOSFET is used for low power motor drive systems and for isolated DC to DC converters.
Ultra low gate impedance
20V VGS maximum gate rating
Fully characterized avalanche voltage and current
relaterade länkar
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