Infineon IPL Type N-Channel MOSFET, 21 A, 700 V Enhancement, 4-Pin PG-VSON-4 IPL65R099C7AUMA1

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97 152,00 kr

(exkl. moms)

121 440,00 kr

(inkl. moms)

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3000 +32,384 kr97 152,00 kr

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RS-artikelnummer:
273-2789
Tillv. art.nr:
IPL65R099C7AUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

700V

Package Type

PG-VSON-4

Series

IPL

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

128W

Typical Gate Charge Qg @ Vgs

45nC

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC (J-STD20 and JESD22)

The Infineon MOSFET is a 650V CoolMOS C7 series power transistor. CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Pb free plating

RoHS compliant

Lower switching losses

Increase power density

Enabling higher frequency

Halogen free mould compound

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