Infineon IPL Type N-Channel MOSFET, 21 A, 650 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R160CFD7AUMA1

Se alla MOSFETs

Antal (1 förpackning med 2 enheter)*

61,29 kr

(exkl. moms)

76,612 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 476 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per förpackning*
2 +30,645 kr61,29 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
240-6622
Tillv. art.nr:
IPL65R160CFD7AUMA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

650V

Package Type

ThinPAK 8x8

Series

IPL

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

95mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

171W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

8.1mm

Automotive Standard

AEC-Q101

The Infineon 650V CoolMOS™ CFD7 super junction MOSFET comes in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Significantly reduced switching losses compared to competition

Extra safety margin for designs with increased bus voltage

Improved full-load efficiency in industrial SMPS applications

High power density

relaterade länkar