Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 700 V Enhancement, 4-Pin PG-VSON-4 IPL65R230C7AUMA1

Antal (1 rulle med 3000 enheter)*

81 285,00 kr

(exkl. moms)

101 607,00 kr

(inkl. moms)

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3000 +27,095 kr81 285,00 kr

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RS-artikelnummer:
273-5349
Tillv. art.nr:
IPL65R230C7AUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

700V

Package Type

PG-VSON-4

Series

CoolMOS C7

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.23Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

67W

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC(J-STD20 andJESD22)

Automotive Standard

No

The Infineon Power MOSFET constructed with CoolMOS™ revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Halogen free

Better efficiency

Pb free lead plating

High power density

Better control of the gate

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