Infineon IPL Type N-Channel MOSFET, 21 A, 650 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R130CFD7AUMA1
- RS-artikelnummer:
- 240-6620
- Tillv. art.nr:
- IPL65R130CFD7AUMA1
- Tillverkare / varumärke:
- Infineon
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48,57 kr
(exkl. moms)
60,71 kr
(inkl. moms)
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- Leverans från den 18 maj 2026
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 48,57 kr |
| 10 - 24 | 46,14 kr |
| 25 - 49 | 44,13 kr |
| 50 - 99 | 42,34 kr |
| 100 + | 39,31 kr |
*vägledande pris
- RS-artikelnummer:
- 240-6620
- Tillv. art.nr:
- IPL65R130CFD7AUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ThinPAK 8x8 | |
| Series | IPL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 171W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ThinPAK 8x8 | ||
Series IPL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 171W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V CoolMOS™ CFD7 super junction MOSFET comes in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Significantly reduced switching losses compared to competition
Extra safety margin for designs with increased bus voltage
Improved full-load efficiency in industrial SMPS applications
High power density
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