Vishay SiRA Type N-Channel MOSFET, 128 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SiRA54ADP-T1-RE3

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17 193,00 kr

(exkl. moms)

21 492,00 kr

(inkl. moms)

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  • Dessutom levereras 6 000 enhet(er) från den 29 december 2025
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3000 +5,731 kr17 193,00 kr

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RS-artikelnummer:
268-8336
Tillv. art.nr:
SiRA54ADP-T1-RE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

40V

Series

SiRA

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0022Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

7nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is single configuration device and It is used an application as synchronous rectification and motor drive control.

ROHS compliant

UIS tested 100 percent

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