Vishay SiR Type N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3

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14 385,00 kr

(exkl. moms)

17 982,00 kr

(inkl. moms)

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RS-artikelnummer:
268-8334
Tillv. art.nr:
SIR5710DP-T1-RE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26.8A

Maximum Drain Source Voltage Vds

150V

Package Type

PowerPAK SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0315Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

56.8W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

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