Vishay SiR Type N-Channel MOSFET, 73 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR184LDP-T1-RE3
- RS-artikelnummer:
- 268-8330
- Tillv. art.nr:
- SIR184LDP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Antal (1 rulle med 3000 enheter)*
15 159,00 kr
(exkl. moms)
18 948,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 6 000 enhet(er) levereras från den 29 december 2025
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 5,053 kr | 15 159,00 kr |
*vägledande pris
- RS-artikelnummer:
- 268-8330
- Tillv. art.nr:
- SIR184LDP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0058Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0058Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
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