Name: Vishay SiR Type N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3
Brand: Vishay
SKU: 268-8332
Price: 7.02 SEK
Availability: Discontinued

Specifikationer

Datablad

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Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33.8A
	Maximum Drain Source Voltage Vds	150V
	Package Type	PowerPAK SO-8
	Series	SiR
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.023Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Power Dissipation Pd	65.7W
	Maximum Operating Temperature	150°C
	Length	5.15mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33.8A
	Maximum Drain Source Voltage Vds 150V
	Package Type PowerPAK SO-8
	Series SiR
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.023Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Power Dissipation Pd 65.7W
	Maximum Operating Temperature 150°C
	Length 5.15mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIR5708DP-T1-RE3

COO (Country of Origin):: CN

The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

Vishay SiR Type N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3

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