Vishay SiR Type N-Channel MOSFET, 73 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR184LDP-T1-RE3
- RS-artikelnummer:
- 268-8331
- Tillv. art.nr:
- SIR184LDP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
105,28 kr
(exkl. moms)
131,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 6 010 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 21,056 kr | 105,28 kr |
| 50 - 95 | 18,838 kr | 94,19 kr |
| 100 - 245 | 14,762 kr | 73,81 kr |
| 250 - 995 | 14,38 kr | 71,90 kr |
| 1000 + | 9,52 kr | 47,60 kr |
*vägledande pris
- RS-artikelnummer:
- 268-8331
- Tillv. art.nr:
- SIR184LDP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0058Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0058Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
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