Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

Se alla MOSFETs

Antal (1 rulle med 2000 enheter)*

59 160,00 kr

(exkl. moms)

73 960,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 2 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
2000 +29,58 kr59 160,00 kr

*vägledande pris

RS-artikelnummer:
268-8310
Tillv. art.nr:
SIHK105N60E-T1-GE3
Tillverkare / varumärke:
Vishay
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Series

SIHK

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.1Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

132W

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

53nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

9.9mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay power MOSFET with 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.

Low effective capacitance

Avalanche energy rated

Low figure of merit

relaterade länkar