Microchip VN3205 Type N-Channel MOSFET, 1.5 A, 50 V MOSFET, 3-Pin SOT-89 VN3205N8-G
- RS-artikelnummer:
- 264-8947
- Tillv. art.nr:
- VN3205N8-G
- Tillverkare / varumärke:
- Microchip
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
92,06 kr
(exkl. moms)
115,075 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 18,412 kr | 92,06 kr |
| 50 - 95 | 13,866 kr | 69,33 kr |
| 100 - 245 | 9,90 kr | 49,50 kr |
| 250 - 995 | 9,676 kr | 48,38 kr |
| 1000 + | 9,452 kr | 47,26 kr |
*vägledande pris
- RS-artikelnummer:
- 264-8947
- Tillv. art.nr:
- VN3205N8-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-89 | |
| Series | VN3205 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | MOSFET | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-89 | ||
Series VN3205 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode MOSFET | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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