Microchip DN3525 Type N-Channel Single MOSFETs, 360 mA, 250 V Depletion, 3-Pin SOT-89 DN3525N8-G
- RS-artikelnummer:
- 649-455
- Tillv. art.nr:
- DN3525N8-G
- Tillverkare / varumärke:
- Microchip
Mängdrabatt möjlig
Antal (1 längd med 5 enheter)*
48,27 kr
(exkl. moms)
60,34 kr
(inkl. moms)
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- Dessutom levereras 2 000 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 5 - 45 | 9,654 kr | 48,27 kr |
| 50 - 245 | 8,49 kr | 42,45 kr |
| 250 - 495 | 7,616 kr | 38,08 kr |
| 500 + | 6,832 kr | 34,16 kr |
*vägledande pris
- RS-artikelnummer:
- 649-455
- Tillv. art.nr:
- DN3525N8-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 360mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-89 | |
| Series | DN3525 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 360mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-89 | ||
Series DN3525 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
The Microchip Low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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