Microchip VN2460 Type N-Channel Single MOSFETs, 250 mA, 600 V Enhancement, 3-Pin SOT-89 VN2460N8-G
- RS-artikelnummer:
- 598-312
- Tillv. art.nr:
- VN2460N8-G
- Tillverkare / varumärke:
- Microchip
Antal (1 rulle med 2000 enheter)*
23 174,00 kr
(exkl. moms)
28 968,00 kr
(inkl. moms)
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- Leverans från den 27 april 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2000 + | 11,587 kr | 23 174,00 kr |
*vägledande pris
- RS-artikelnummer:
- 598-312
- Tillv. art.nr:
- VN2460N8-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-89 | |
| Series | VN2460 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.6mm | |
| Height | 1.6mm | |
| Standards/Approvals | RoHS | |
| Width | 2.6 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-89 | ||
Series VN2460 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Length 4.6mm | ||
Height 1.6mm | ||
Standards/Approvals RoHS | ||
Width 2.6 mm | ||
Automotive Standard No | ||
The Microchip N Channel enhancement-mode vertical MOSFET is a normally-off transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while offering the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even under demanding conditions.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and high gain
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