Microchip TN2524 Type N-Channel MOSFET, 360 A, 240 V Enhancement, 3-Pin SOT-89
- RS-artikelnummer:
- 264-8918
- Tillv. art.nr:
- TN2524N8-G
- Tillverkare / varumärke:
- Microchip
Antal (1 rulle med 2000 enheter)*
19 462,00 kr
(exkl. moms)
24 328,00 kr
(inkl. moms)
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- Leverans från den 24 februari 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2000 + | 9,731 kr | 19 462,00 kr |
*vägledande pris
- RS-artikelnummer:
- 264-8918
- Tillv. art.nr:
- TN2524N8-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 240V | |
| Series | TN2524 | |
| Package Type | SOT-89 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Length | 4.6mm | |
| Width | 2.6 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 240V | ||
Series TN2524 | ||
Package Type SOT-89 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Length 4.6mm | ||
Width 2.6 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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