Microchip TN5335 Type N-Channel MOSFET, 230 mA, 350 V MOSFET, 3-Pin SOT-23
- RS-artikelnummer:
- 264-8924
- Tillv. art.nr:
- TN5335K1-G
- Tillverkare / varumärke:
- Microchip
Antal (1 rulle med 3000 enheter)*
22 860,00 kr
(exkl. moms)
28 560,00 kr
(inkl. moms)
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- Leverans från den 03 februari 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 7,62 kr | 22 860,00 kr |
*vägledande pris
- RS-artikelnummer:
- 264-8924
- Tillv. art.nr:
- TN5335K1-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 350V | |
| Package Type | SOT-23 | |
| Series | TN5335 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15Ω | |
| Channel Mode | MOSFET | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1.12mm | |
| Width | 1.3 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 350V | ||
Package Type SOT-23 | ||
Series TN5335 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15Ω | ||
Channel Mode MOSFET | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1.12mm | ||
Width 1.3 mm | ||
Automotive Standard No | ||
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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