Microchip Type P-Channel MOSFET, -200 mA, 350 V MOSFET, 3-Pin SOT-23 TP5335K1-G
- RS-artikelnummer:
- 264-8932
- Tillv. art.nr:
- TP5335K1-G
- Tillverkare / varumärke:
- Microchip
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
63,62 kr
(exkl. moms)
79,52 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 490 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 6,362 kr | 63,62 kr |
| 50 - 90 | 6,238 kr | 62,38 kr |
| 100 - 240 | 4,827 kr | 48,27 kr |
| 250 - 990 | 4,749 kr | 47,49 kr |
| 1000 + | 4,648 kr | 46,48 kr |
*vägledande pris
- RS-artikelnummer:
- 264-8932
- Tillv. art.nr:
- TP5335K1-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -200mA | |
| Maximum Drain Source Voltage Vds | 350V | |
| Package Type | SOT-23 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | MOSFET | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -200mA | ||
Maximum Drain Source Voltage Vds 350V | ||
Package Type SOT-23 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode MOSFET | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
relaterade länkar
- Microchip Type P-Channel MOSFET 350 V MOSFET, 3-Pin SOT-23
- Microchip TN5335 Type N-Channel MOSFET 350 V MOSFET, 3-Pin SOT-23
- Microchip TN5335 Type N-Channel MOSFET 350 V MOSFET, 3-Pin SOT-23 TN5335K1-G
- Nexperia Dual N/P-Channel MOSFET 350 mA 6-Pin SOT-363 NX3008CBKS,115
- Microchip DN3135 Type N-Channel MOSFET 350 V Depletion, 3-Pin SOT-23
- Microchip DN3135 Type N-Channel MOSFET 350 V Depletion, 3-Pin SOT-23 DN3135K1-G
- DiodesZetex Type P-Channel MOSFET 200 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type P-Channel MOSFET 200 V Enhancement, 3-Pin SOT-23 ZVP1320FTA