Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND250K1-G

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20 976,00 kr

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26 220,00 kr

(inkl. moms)

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RS-artikelnummer:
598-794
Tillv. art.nr:
LND250K1-G
Tillverkare / varumärke:
Microchip
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Brand

Microchip

Product Type

Single MOSFETs

Channel Type

N-Channel DMOS FET

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

9V

Package Type

SOT-23-5

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Depletion Mode

Forward Voltage Vf

1.8V

Minimum Operating Temperature

-25°C

Maximum Power Dissipation Pd

360mW

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

125°C

Standards/Approvals

RoHS, ISO/TS‑16949

Width

1.75 mm

Length

3.05mm

Height

1.3mm

Automotive Standard

No

COO (Country of Origin):
TH
The Microchip High voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral source drain diode

High input impedance and low CISS

ESD gate protection

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