Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND01K1-G

Se alla MOSFETs

Antal (1 rulle med 3000 enheter)*

24 126,00 kr

(exkl. moms)

30 156,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 04 mars 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
3000 +8,042 kr24 126,00 kr

*vägledande pris

RS-artikelnummer:
598-897
Tillv. art.nr:
LND01K1-G
Tillverkare / varumärke:
Microchip
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Microchip

Product Type

Single MOSFETs

Channel Type

N-Channel DMOS FET

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

9V

Package Type

SOT-23-5

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Depletion Mode

Minimum Operating Temperature

-25°C

Forward Voltage Vf

1.8V

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

360mW

Maximum Operating Temperature

125°C

Standards/Approvals

ISO/TS‑16949, RoHS

Height

1.3mm

Length

3.05mm

Width

1.75 mm

Automotive Standard

No

The Microchip Depletion-Mode MOSFET is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Low on resistance

Low input capacitance

Fast switching speeds

High input impedance and high gain

Low power drive requirement

Ease of paralleling

relaterade länkar