STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel SCT055HU65G3AG

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136,53 kr

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170,66 kr

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Förpackningsalternativ:
RS-artikelnummer:
261-5043
Tillv. art.nr:
SCT055HU65G3AG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

Tape & Reel

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

29nC

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

3.5mm

Length

18.58mm

Width

14 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MA

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package


The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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