STMicroelectronics Type N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK

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RS-artikelnummer:
224-9997
Tillv. art.nr:
SCTH35N65G2V-7AG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

67mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.3V

Typical Gate Charge Qg @ Vgs

14nC

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

208W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.4mm

Width

4.8 mm

Height

15.25mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

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