Infineon Typ N Kanal, MOSFET, 13 A 600 V, 3 Ben, TO-220, IPP

RS-artikelnummer:: 260-1216
Tillv. art.nr:: IPP60R040S7XKSA1
Tillverkare / varumärke:: Infineon

Infineon Typ N Kanal, MOSFET, 13 A 600 V, 3 Ben, TO-220, IPP

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47,04 kr

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58,80 kr

(inkl. moms)

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Dessutom levereras 355 enhet(er) från den 17 mars 2026

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*vägledande pris

RS-artikelnummer:: 260-1216
Tillv. art.nr:: IPP60R040S7XKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Varumärke	Infineon
	Kanaltyp	Typ N
	Produkttyp	MOSFET
	Maximal kontinuerlig dräneringsström Id	13A
	Maximal källspänning för dränering Vds	600V
	Kapseltyp	TO-220
	Serie	IPP
	Fästetyp	Genomgående hål
	Antal ben	3
	Maximal drain-källresistans Rds	40mΩ
	Maximal spänning för grindkälla Vgs	30 V
	Framåtriktad spänning Vf	0.82V
	Typisk grindladdning Qg @ Vgs	83nC
	Maximal effektförlust Pd	245W
	Minsta arbetsstemperatur	-55°C
	Maximal arbetstemperatur	150°C
	Höjd	4.57mm
	Standarder/godkännanden	RoHS
	Längd	10.36mm
	Bredd	15.95 mm
	Fordonsstandard	Nej

	Välj alla
	Varumärke Infineon
	Kanaltyp Typ N
	Produkttyp MOSFET
	Maximal kontinuerlig dräneringsström Id 13A
	Maximal källspänning för dränering Vds 600V
	Kapseltyp TO-220
	Serie IPP
	Fästetyp Genomgående hål
	Antal ben 3
	Maximal drain-källresistans Rds 40mΩ
	Maximal spänning för grindkälla Vgs 30 V
	Framåtriktad spänning Vf 0.82V
	Typisk grindladdning Qg @ Vgs 83nC
	Maximal effektförlust Pd 245W
	Minsta arbetsstemperatur -55°C
	Maximal arbetstemperatur 150°C
	Höjd 4.57mm
	Standarder/godkännanden RoHS
	Längd 10.36mm
	Bredd 15.95 mm
	Fordonsstandard Nej

Datasheet - IPP60R040S7XKSA1

Infineon Series IPP MOSFET Transistor, 600V Maximum Drain Source Voltage, 13A Maximum Continuous Drain Current - IPP60R040S7XKSA1

This MOSFET transistor is a cutting-edge high-voltage semiconductor component designed for efficient power switching. With robust specifications including a continuous drain current of 13A and a maximum drain-source voltage of 600V, it is encapsulated in a TO-220 package, making it suitable for a variety of applications. Ensuring reliable performance in demanding environments, it operates within a wide temperature range from -55°C to +150°C.

Features & Benefits

• Designed with CoolMOS™ S7 technology to minimise conduction losses

• Offers a low on-state resistance of 40mΩ for enhanced efficiency

• Capable of handling high pulse currents for demanding requirements

• Optimised for low-frequency switching applications, improving system performance

• Built-in features ensure high reliability in static switching scenarios

Applications

• Utilised for solid-state relays and innovative circuit breaker designs

• Ideal for line rectification within high-power performances such as computing and telecommunications

• Applicable in renewable energy solutions, particularly solar inverters

What are the critical features impacting thermal performance?

The device boasts a maximum power dissipation of 245W and a thermal resistance from junction to ambient of 62°C/W, facilitating effective heat management. This ensures longevity and reliability in demanding operational conditions.

How does this component enhance system efficiency for low-frequency applications?

With its low on-state resistance and CoolMOS™ technology, energy losses during operation are significantly reduced, enabling improved overall efficiency and minimising heat generation in low-frequency environments.

What are the recommended practices for using this in high-voltage applications?

It is advisable to evaluate the impact of cosmic radiation during the design phase and consider appropriate design practices, such as using ferrite beads on the gate for parallel applications, to mitigate any potential issues.