Infineon BSZ Type N-Channel MOSFET, 102 A, 30 V N, 8-Pin TSDSON BSZ0902NSIATMA1
- RS-artikelnummer:
- 259-1484
- Tillv. art.nr:
- BSZ0902NSIATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
67,72 kr
(exkl. moms)
84,65 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 4 970 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 13,544 kr | 67,72 kr |
| 50 - 120 | 10,82 kr | 54,10 kr |
| 125 - 245 | 10,148 kr | 50,74 kr |
| 250 - 495 | 9,452 kr | 47,26 kr |
| 500 + | 4,95 kr | 24,75 kr |
*vägledande pris
- RS-artikelnummer:
- 259-1484
- Tillv. art.nr:
- BSZ0902NSIATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 102A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | N | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 102A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode N | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon power MOSFET has ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. It is tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life.
Ultra low gate and output charge
Lowest on-state resistance in small footprint packages
Easy to design in
Increased battery lifetime
Improved EMI behaviour making external snubber networks obsolete
Saving costs
Saving space
Reducing power losses
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