Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V TO-263
- RS-artikelnummer:
- 258-3989
- Tillv. art.nr:
- IRFZ48NSTRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rulle med 800 enheter)*
5 738,40 kr
(exkl. moms)
7 172,80 kr
(inkl. moms)
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- Leverans från den 16 mars 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 800 - 800 | 7,173 kr | 5 738,40 kr |
| 1600 - 1600 | 6,814 kr | 5 451,20 kr |
| 2400 + | 6,527 kr | 5 221,60 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3989
- Tillv. art.nr:
- IRFZ48NSTRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.014Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 130W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.014Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 130W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Advanced Process Technology
Surface Mount
Low-profile through-hole
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
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