Infineon IPW Type N-Channel MOSFET, 50 A, 650 V, 3-Pin TO-247 IPW65R041CFD7XKSA1
- RS-artikelnummer:
- 258-3915
- Tillv. art.nr:
- IPW65R041CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
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Antal (1 enhet)*
108,90 kr
(exkl. moms)
136,12 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 4 | 108,90 kr |
| 5 - 9 | 103,49 kr |
| 10 - 24 | 101,25 kr |
| 25 - 49 | 94,75 kr |
| 50 + | 88,14 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3915
- Tillv. art.nr:
- IPW65R041CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Power Dissipation Pd | 227W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Power Dissipation Pd 227W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
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- Infineon IPW Type N-Channel MOSFET 900 V TO-247