Infineon iPB Type N-Channel MOSFET, 22.4 A, 700 V N TO-263
- RS-artikelnummer:
- 258-3810
- Tillv. art.nr:
- IPB65R150CFDATMA2
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 1000 enheter)*
16 335,00 kr
(exkl. moms)
20 419,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1000 + | 16,335 kr | 16 335,00 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3810
- Tillv. art.nr:
- IPB65R150CFDATMA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22.4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 40.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22.4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 40.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD2 is second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this product a clear advantage in comparison with competitor parts.
Easy to design-in
Lower price compared to 600V CFD technology
Low Qoss
Reduced turn on and turn of delay times
Outstanding CoolMOS quality
relaterade länkar
- Infineon iPB Type N-Channel MOSFET 700 V N TO-263 IPB65R150CFDATMA2
- Infineon iPB Type N-Channel MOSFET, 90 A Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET 600 V N TO-263
- Infineon iPB Type N-Channel MOSFET 60 V N TO-263
- Infineon iPB Type N-Channel MOSFET 650 V N TO-263
- Infineon iPB Type N-Channel MOSFET 80 V N TO-263
