Infineon HEXFET Type N-Channel MOSFET, -13 A, -150 V TO-252 IRFR6215TRPBF
- RS-artikelnummer:
- 257-9414
- Tillv. art.nr:
- IRFR6215TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
58,14 kr
(exkl. moms)
72,675 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 090 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 11,628 kr | 58,14 kr |
| 50 - 120 | 10,482 kr | 52,41 kr |
| 125 - 245 | 9,766 kr | 48,83 kr |
| 250 - 495 | 9,084 kr | 45,42 kr |
| 500 + | 5,824 kr | 29,12 kr |
*vägledande pris
- RS-artikelnummer:
- 257-9414
- Tillv. art.nr:
- IRFR6215TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | -13A | |
| Maximum Drain Source Voltage Vds | -150V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 580mΩ | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id -13A | ||
Maximum Drain Source Voltage Vds -150V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 580mΩ | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFR series is the -150V single p channel IR mosfet in a D Pak package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount package
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