Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V TO-252

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21 639,00 kr

(exkl. moms)

27 048,00 kr

(inkl. moms)

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3000 +7,213 kr21 639,00 kr

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RS-artikelnummer:
257-5546
Tillv. art.nr:
IRFR4615TRLPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-252

Mount Type

PCB

Maximum Drain Source Resistance Rds

34mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

144W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

26nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface mount package

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