Infineon HEXFET Type N-Channel MOSFET, 120 A, 40 V TO-252 IRFR7446TRPBF
- RS-artikelnummer:
- 257-5883
- Tillv. art.nr:
- IRFR7446TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
55,72 kr
(exkl. moms)
69,65 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 405 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 11,144 kr | 55,72 kr |
| 50 - 120 | 10,148 kr | 50,74 kr |
| 125 - 245 | 9,476 kr | 47,38 kr |
| 250 - 495 | 8,804 kr | 44,02 kr |
| 500 + | 8,154 kr | 40,77 kr |
*vägledande pris
- RS-artikelnummer:
- 257-5883
- Tillv. art.nr:
- IRFR7446TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 98W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 98W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET improved gate, avalanche and dynamic dV/dt ruggedness and it’s used for OR-ing and redundant power switches and DC/DC and AC/DC converters, DC/AC Inverters.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dv/dt and dI/dt Capability
Lead-Free
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