Infineon HEXFET Type N-Channel MOSFET, 119 A, 40 V TO-252 IRFR4104TRPBF
- RS-artikelnummer:
- 217-2625
- Tillv. art.nr:
- IRFR4104TRPBF
- Tillverkare / varumärke:
- Infineon
Antal (1 förpackning med 10 enheter)*
64,87 kr
(exkl. moms)
81,09 kr
(inkl. moms)
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- Dessutom levereras 3 960 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 + | 6,487 kr | 64,87 kr |
*vägledande pris
- RS-artikelnummer:
- 217-2625
- Tillv. art.nr:
- IRFR4104TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 5.5mΩ | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Width | 2.39 mm | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-39-423 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 5.5mΩ | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Width 2.39 mm | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-39-423 | ||
The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance 1
75°C Operating Temperature
Fast Switching R
repetitive Avalanche Allowed up to Tjmax L
ead-Free
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