Infineon HEXFET Type N-Channel MOSFET, 295 A, 40 V, 7-Pin TO-263 IRFS7437TRL7PP
- RS-artikelnummer:
- 257-5829
- Distrelec artikelnummer:
- 304-40-544
- Tillv. art.nr:
- IRFS7437TRL7PP
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
64,26 kr
(exkl. moms)
80,32 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 784 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 32,13 kr | 64,26 kr |
| 20 - 48 | 29,175 kr | 58,35 kr |
| 50 - 98 | 27,27 kr | 54,54 kr |
| 100 - 198 | 25,37 kr | 50,74 kr |
| 200 + | 23,465 kr | 46,93 kr |
*vägledande pris
- RS-artikelnummer:
- 257-5829
- Distrelec artikelnummer:
- 304-40-544
- Tillv. art.nr:
- IRFS7437TRL7PP
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 295A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 231W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 295A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 231W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Length 10.54mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount power package
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 40 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V, 7-Pin TO-263 IRFS7434TRL7PP
- Infineon HEXFET Type N-Channel MOSFET 7-Pin TO-263-7 AUIRLS3036-7P
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
