Infineon HEXFET Type N-Channel MOSFET, 522 A, 40 V Enhancement, 7-Pin TO-263
- RS-artikelnummer:
- 215-2453
- Tillv. art.nr:
- AUIRFS8409-7TRL
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 800 enheter)*
27 132,80 kr
(exkl. moms)
33 916,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 30 mars 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 800 + | 33,916 kr | 27 132,80 kr |
*vägledande pris
- RS-artikelnummer:
- 215-2453
- Tillv. art.nr:
- AUIRFS8409-7TRL
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 522A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 305nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 522A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.75mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 305nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Automotive DirectFET® Power MOSFET has 60V maximum drain source voltage with 68A maximum continuous drain current in a D2-Pak 7pin package. specifically designed for automotive application, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance par silicon area. Additional features of these designs are 175°C junction operating temperature, fast switching speed and improve repetitive avalanche rating. This feature combined to make this product an extremely efficient and reliable device for use in automotive and wide variety of other applications.
Advanced Process Technology
New Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free
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